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CHV2242C
RoHS COMPLIANT
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
GaAs Monolithic Microwave IC Description
The CHV2242C is a monolithic multifunction for frequency generation. It integrates a Ku-band oscillator with frequency control (VCO), a Qband frequency multiplier and buffer amplifiers. For performance optimisation, two external ports (ERC1 and ERC2) allow a passive resonator coupling to the oscillator (at one third of output frequency). On chip Schottky diode, based on a P-HEMT, is used as varactor. All the active devices are internally self-biased. The circuit is manufactured with the P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
F_VCO = F_out/3 ERC1 MEDIUM Q RESONATOR ERC2
+V
-V
RF_out x3
(F_out)
V_tune
Multifunction block diagram
38,7 Output frequency (GHz) 38,6 38,5 38,4 38,3 38,2 38,1 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2
Main Features
Ku-band VCO + Q-band multiplier On chip varactor External resonator for centre frequency control and phase noise optimisation Low phase noise Auxiliary output at VCO frequency High temperature range On-chip self biasing Automatic assembly oriented Chip size 2.41 x 1.18 x 0.1 mm BCB Layer protection
Tuning voltage (V)
Typical tuning characteristic (Coupled to a micro-strip filter
Main Characteristics
Tamb = +25 C Symbol F_out F_vco F_tune Pout Parameter Min 38 150 5 Typ 38.25 F_out/3 200 7 MHz dBm Max 38.5 Unit GHz
Output centre frequency Oscillator frequency Output frequency tuning range Output power
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHV2242C6354 - 20 Dec 06
1/9
Specifications subject to change without notice
united monolithic semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHV2242C
Electrical Characteristics
Q-band VCO
Full temperature range, used according to section "Typical assembly and bias configuration" Symbol F_out F_vco F_tune P_out F_slope V_tune Pushing Parameter Min Typ Max Unit Output centre frequency 38 38.25 38.5 GHz VCO frequency (1) F_out/3 Frequency tuning range (at F_out) (2) 150 200 MHz Output power 5 7 dBm Frequency tuning slope (2) 500 MHz/V Control voltage range 0.2 - 0.8 0 - 1.5 V Frequency pushing vs positive supply 60 MHz/v voltage PN Phase noise (given at F_out) (2) @ 10kHz -48 -43 dBc/Hz @ 100kHz -75 -70 @ 1MHz -100 -95 +V Positive supply voltage 4.4 4.5 4.6 V +I Positive supply current 110 160 mA -V Negative supply voltage -4.6 -4.5 -4.4 V -I Negative supply current 5 8 mA Top Operating temperature range -40 100 C (1) The centre frequency is given by the external passive resonator (2) This characteristic depends on the resonator Q, the given performance has been obtained by using a micro-strip filter used as resonator (see section "Proposed External Medium Q Resonator")
Absolute Maximum Ratings (1)
Symbol V_tune +V -V +I -I Tstg
(1)
Parameter Tuning voltage Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range
Values 2.5 5 -5 250 15 -55 to +155
Unit V V V mA mA C
Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHV2242C6354 - 20 Dec 06
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Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Q-band VCO
Chip Mechanical Data and Pin References
CHV2242C
Unit = m External chip size = 2410 x 1180 +/- 35 Chip thickness = 100 +/- 10 RF Pads (1, 2,11) = 83 x 86 DC/IF Pads = 98 x 95
Pin number
1 2 3, 7 4, 6 5, 8 9 10 11 No Number
Pin name
ERC2 RF_out +V -V V-tune ERC1
Description
External Resonator Coupling Port 2 RF output at 38GHz NC Positive supply voltage Negative supply voltage GND (optional) Tuning voltage input port External Resonator Coupling Port 1 Ground : should not be bonded. If required, please ask for more information.
Ref. : DSCHV2242C6354 - 20 Dec 06
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Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHV2242C
Typical Assembly and Bias Configuration
Q-band VCO
This drawing shows an example of assembly and bias configuration. All the transistors are internally self-biased. The positive and negative voltages can be respectively connected together (see drawing) according to the recommended values given in the electrical characteristics table. Due to the high value of frequency sensitivity versus tuning voltage (around 500MHz/V), the signal applied to V_tune port must have very low level of noise. For the RF pads the equivalent wire bonding inductance (diameter=25m) has to be according to the following recommendation. Port ERC1 (11) ERC2 (1) RF_out (2) Equivalent inductance (nH) L_erc1 = 0.4 L_erc2 = 0.4 L_out = 0.28 Approximated wire length (mm) 0.5 0.5 0.35
For a micro-strip configuration a hole in the substrate is recommended for chip assembly.
Ref. : DSCHV2242C6354 - 20 Dec 06
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Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Q-band VCO
Proposed External Medium Q Resonator
This resonator can be used for 77GHz FMCW-based radar applications.
CHV2242C
The chip has been especially designed to be coupled to a medium Q resonator printed on temperature compensated soft substrate. The resonance is given by three half wave coupled lines. The length of the coupler (L) gives the centre frequency and the space between the coupled lines (s) gives the bandwidth. For easy connection and phase considerations half wave lines are at the input and output of the filter. All the recommended dimensions are given in the following drawing.
The main substrate characteristics are the following (ROGERS R03003) Dielectric constant 3 Thickness 250m Dissipation factor (10GHz) 0.0013 Thermal coefficient 13 ppm/ C
The typical resonator length (L) is 7.35mm for a coupling value (s) of 0.4mm and for a frequency of 38.25GHz. However this L value should have to be adjusted depending on the final chip environment. Other possibility is ARLON/CLTE substrate. (L is 7.27mm for s=0.4mm)
Ref. : DSCHV2242C6354 - 20 Dec 06
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Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHV2242C
Proposed External Medium Q Resonator
Q-band VCO
The following information is about the S parameter of the resonator (plot for S21 and table for the four parameters). These values don't include the wire bonding equivalent inductance L_erc1 and L_erc2 given in section "Typical Assembly and Bias Configuration".
S21 of the proposed external resonator
S parameters of the proposed external resonator
Ref. : DSCHV2242C6354 - 20 Dec 06
6/9
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Q-band VCO
External Resonator Coupling Information
CHV2242C
The external resonator has to be an equivalent band-pass filter with 180 insertion phase at resonance (oscillation) frequency. However, this filter must be compatible to the loop parameters of the oscillator (between ERC ports) in order to obtain the oscillation conditions and to avoid parasitic oscillations. The following information concerns the S parameters of the chip (plots for S21 and tables for the four parameters), reference ports are ERC1 and ERC2. These values don't include the wire bonding equivalent inductance L_erc1 and L_erc2 given in section "Typical Assembly and Bias Configuration". For more detail and for a wider band analysis a complete S parameter file is available on request. MMIC S21 for V_tune=0V (between ERC1 and ERC2)
freq 11 11.25 11.5 11.75 12 12.25 12.5 12.75 13 13.25 13.5 13.75 14 14..25
dB(S11) -4.76 -5.98 -7.56 -8.71 -8.22 -6.62 -5.06 -3.88 -3.04 -2.45 -2.01 -1.67 -1.46 -1.28
Phase(S11) -120.8 -143.0 -172.9 147.5 105.0 71.3 47.3 29.9 16.5 6.0 -2.6 -9.7 -15.9 -21.2
dB(S21) 6.28 6.73 7.035 7.10 6.86 6.34 5.63 4.80 3.95 3.10 2.30 1.54 0.82 0.16
Phase(S21) -136.9 -152.2 -168.3 175.1 158.7 143.4 129.5 117.3 106.6 97.1 88.6 81.0 73.9 67.4
dB(S12) -24.28 -23.66 -23.17 -22.94 -23.01 -23.36 -23.91 -24.58 -25.23 -25.97 -26.62 -27.23 -27.80 -28.31
Phase(S12) 135.4 120.9 105.6 89.7 74.0 59.3 46.1 34.4 24.2 15.3 7.3 0.2 -6.4 -12.6
dB(S22) -10.50 -10.96 -11.18 -10.95 -10.34 -9.64 -9.06 -8.67 -8.43 -8.31 -8.28 -8.30 -8.37 -8.47
Phase(S22) -39.2 -36.4 -31.7 -26.5 -23.1 -22.4 -23.7 -25.8 -28.2 -30.7 -32.9 -35.0 -36.8 -38.5
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Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
CHV2242C
MMIC S21 for V_tune=2V (between ERC1 and ERC2)
Q-band VCO
freq 11 11.25 11.5 11.75 12 12.25 12.5 12.75 13 13.25 13.5 13.75 14 14..25
dB(S11) -6.2 -5.2 -5 -5.5 -7.1 -10.4 -18.4 -16.1 -9.1 -5.8 -4.1 -3.0 -2.3 -1.9
Phase(S11) -16.0 -34.1 -50.3 -66.5 -84.5 -107.1 -151.9 80.0 45.0 25.9 11.9 1.2 -7.5 -14.5
dB(S21) 1.66 2.88 4.07 5.26 6.39 7.34 7.91 7.94 7.46 6.63 5.66 4.66 3.7 2.81
Phase(S21) -89.1 -103.6 -117.8 -132.6 -148.6 -166.6 173.9 153.9 135.3 119.1 105.4 93.9 84.1 75.5
dB(S12) -28.9 -27.5 -26.1 -24.8 -23.5 -22.4 -21.6 -21.4 -21.8 -22.4 -23.3 -24.1 -24.9 -25.7
Phase(S12) -176.9 169.5 156.0 142.0 126.6 109.4 90.4 71.1 53.0 37.3 24.1 13.1 3.7 -4.5
dB(S22) -9.16 -9.86 -10.82 -12.14 -13.76 -14.75 -13.45 -11.18 -9.42 -8.39 -7.87 -7.64 -7.59 -7.64
Phase(S22) 50.9 -52.7 -53.7 -52.6 -46.1 -30.0 -12.4 -6.7 -9.6 -15.0 -20.6 -25.5 -29.6 -33
Ref. : DSCHV2242C6354 - 20 Dec 06
8/9
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Q-band VCO
CHV2242C
Ordering Information
Chip form:
CHV2242C98F/00
Information furnished is believed to be accurate and reliable. However united monolithic semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S.
Ref. : DSCHV2242C6354 - 20 Dec 06
9/9
Specifications subject to change without notice
Route Departementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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